Title :
MBiCMOS: A Device And Circuit Technique Scalable To The Sub-micron, Sub-211 Regime
Author :
Raje, P. ; Ritts, R. ; Cham, K. ; Plummer, J. ; Saraswat, K.
Author_Institution :
Stanford University
Keywords :
BiCMOS integrated circuits; CMOS technology; Capacitance; Circuit simulation; Delay; Logic devices; Merging; Silicon; Turning; Voltage control;
Conference_Titel :
Solid-State Circuits Conference, 1991. Digest of Technical Papers. 38th ISSCC., 1991 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-644-6
DOI :
10.1109/ISSCC.1991.689104
