MBiCMOS: A Device And Circuit Technique Scalable To The Sub-micron, Sub-211 Regime

Author

Raje, P. ; Ritts, R. ; Cham, K. ; Plummer, J. ; Saraswat, K.

Author_Institution

Stanford University

fYear

1991

fDate

13-15 Feb. 1991

Firstpage

150

Lastpage

307

Keywords

BiCMOS integrated circuits; CMOS technology; Capacitance; Circuit simulation; Delay; Logic devices; Merging; Silicon; Turning; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1991. Digest of Technical Papers. 38th ISSCC., 1991 IEEE International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-87942-644-6

Type

DOI

10.1109/ISSCC.1991.689104

Filename

689104

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