MBE-grown Mn-doped SnSe2 2D films on GaAs (111)B substrates

Author

Liu, X. ; Li, X. ; Vishwanath, S. ; Dong, S. ; Yoo, T. ; Jena, D. ; Xing, H. ; Dobrowolska, M. ; Furdyna, J.K.

Author_Institution

Dept. of Phys., Univ. of Notre Dame, Notre Dame, IN, USA

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

Intensive research is currently being aimed at understanding both the growth and the physical properties of a wide range of two-dimensional (2D) materials, since this class of materials is expected to lead to entirely new types of devices on the nanoscale. Additionally, the introduction of magnetic dopants into a 2D lattice can bring out new functionalities, providing new opportunities for spintronic applications. In this work we explore this area by introducing Mn ions into the 2D lattice of SnSe₂. The growth of Mn-doped SnSe₂ films was carried out by molecular beam epitaxy (MBE) on GaAs (111)B substrates by varying the flux of Mn during the growth. Rigorous characterization of the physical properties of this material was carried out by a wide range of complementary studies, including RHEED, XRD, electric-transport and Raman spectroscopy.

Keywords

Raman spectra; X-ray diffraction; magnetic thin films; manganese compounds; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; tin compounds; 2D lattice; GaAs; GaAs (111)B substrates; Mn flux; Mn ions; RHEED; Raman spectroscopy; SnSe₂:Mn; XRD; electric-transport; magnetic dopants; molecular beam epitaxy-grown Mn-doped 2D films; physical properties; spintronic applications; Gallium arsenide; Lattices; Magnetic flux; Manganese; Molecular beam epitaxial growth; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7156850

Filename

7156850