DocumentCode
3127476
Title
Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs
Author
Rim, K. ; Narasimha, S. ; Longstreet, M. ; Mocuta, A. ; Cai, J.
Author_Institution
IBM Semicond. Res. & Dev. Center, T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
43
Lastpage
46
Abstract
A novel mobility extraction technique showed that the mobility enhancements in strained Si MOSFETs were retained in deep sub-100 nm channel lengths. Mobility measurement in devices with channel lengths down to 40 nm was demonstrated by a dR/dL extraction method. The results confirmed and quantified the mobility enhancements despite the presence of high halo doping in scaled strained Si MOSFETs.
Keywords
MOSFET; carrier mobility; elemental semiconductors; silicon; 40 to 100 nm; Si; halo doping; low-field mobility; parameter extraction; strained Si MOSFET; unstrained Si MOSFET; CMOS technology; Current measurement; Dielectrics; Doping; Electrical resistance measurement; Length measurement; MOSFETs; Performance analysis; Semiconductor process modeling; Uncertainty;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175775
Filename
1175775
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