Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm

Author

Uchida, K. ; Watanabe, H. ; Kinoshita, A. ; Koga, J. ; Numata, T. ; Takagi, S.

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

47

Lastpage

50

Abstract

The electrical characteristics of ultrathin-body SOI CMOSFETs with SOI thickness ranging from 2.3 nm to 8 nm are intensively investigated. As a result, it is demonstrated, for the first time, that electron mobility increases as SOI thickness decreases, when SO, thickness is in the range from 3.5 nm to 4.5 nm. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

Keywords

MOSFET; electron mobility; silicon-on-insulator; 2.3 to 8 nm; carrier transport; electrical characteristics; electron mobility; gate-channel capacitance; thickness fluctuations; threshold voltage; ultrathin-body SOI CMOSFET; CMOSFETs; Capacitance; Electric variables; Electron mobility; Fabrication; Fluctuations; MOSFET circuits; Particle scattering; Potential well; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175776

Filename

1175776