High speed InP-based HBTs and OEICs

Author

Jackel, H. ; Hammer, U. ; Ruiz, J. ; Schnyder, I. ; Schwarz, V. ; Gaspar, A. ; Huber, D. ; Rohner, A. ; Huber, A.

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

83

Lastpage

86

Abstract

InP-based HBT-technology is a prime candidate to provide ultra fast ICs for 40 and 80 Gb/s operation and has the unique potential for realizing monolithic opto/electronic ICs (OEIC) at the mainstream 1.55/spl mu/m wavelength. We review our own as well as other group´s work on 40 Gb/s lightwave communication circuits and address on-going scaling efforts for InP-HBTs with f/sub t/ and f/sub max/ > 300 GHz. Preliminary device and circuit simulations show extendibility of aggressively scaled HBT-technology towards 160 Gb/s operation.

Keywords

III-V semiconductors; bipolar MMIC; circuit simulation; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical fibre communication; optical receivers; very high speed integrated circuits; 1.55 micron; 40 Gbit/s; 80 Gbit/s; HBTs; InP; OEICs; circuit simulations; extendibility; lightwave communication circuits; scaling; ultra fast ICs; Circuit simulation; Communication systems; Double heterojunction bipolar transistors; HEMTs; Heterojunction bipolar transistors; Laboratories; MODFETs; Optical fiber communication; Optoelectronic devices; Photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175784

Filename

1175784