Title :
High speed InP-based HBTs and OEICs
Author :
Jackel, H. ; Hammer, U. ; Ruiz, J. ; Schnyder, I. ; Schwarz, V. ; Gaspar, A. ; Huber, D. ; Rohner, A. ; Huber, A.
Author_Institution :
Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
InP-based HBT-technology is a prime candidate to provide ultra fast ICs for 40 and 80 Gb/s operation and has the unique potential for realizing monolithic opto/electronic ICs (OEIC) at the mainstream 1.55/spl mu/m wavelength. We review our own as well as other group´s work on 40 Gb/s lightwave communication circuits and address on-going scaling efforts for InP-HBTs with f/sub t/ and f/sub max/ > 300 GHz. Preliminary device and circuit simulations show extendibility of aggressively scaled HBT-technology towards 160 Gb/s operation.
Keywords :
III-V semiconductors; bipolar MMIC; circuit simulation; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical fibre communication; optical receivers; very high speed integrated circuits; 1.55 micron; 40 Gbit/s; 80 Gbit/s; HBTs; InP; OEICs; circuit simulations; extendibility; lightwave communication circuits; scaling; ultra fast ICs; Circuit simulation; Communication systems; Double heterojunction bipolar transistors; HEMTs; Heterojunction bipolar transistors; Laboratories; MODFETs; Optical fiber communication; Optoelectronic devices; Photodiodes;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175784
