A 77 GHz broadband flip-chip transition on LTCC submount

Author

Schmückle, F.J. ; Pursche, U. ; Heinrich, Wolfgang ; Purden, Joe

Author_Institution

Ferdinand-Braun-Inst. (FBH), Berlin, Germany

fYear

2010

fDate

23-28 May 2010

Firstpage

453

Lastpage

456

Abstract

A flip-chip interconnect of a SiGe chip to an LTCC submount with microstrip feeding line is presented. In order to be compatible with cost-effective submount solutions, bumps with 125 μm diameter and 100 μm design rules on the LTCC side are applied. Also, the use of vias is avoided. Although the dimensions are relatively large for the 77 GHz range, transitions with 10 GHz bandwidth are achieved. Test structures were manufactured and measurement results show good agreement with simulation yielding less than 1 dB of insertion loss at 77 GHz.

Keywords

Ge-Si alloys; ceramic packaging; flip-chip devices; integrated circuit interconnections; millimetre wave integrated circuits; LTCC submount; SiGe; broadband flip-chip transition; flip-chip interconnect; frequency 10 GHz; frequency 77 GHz; microstrip feeding line; size 100 mum; size 125 mum; Bandwidth; Costs; Dielectric loss measurement; Germanium silicon alloys; Loss measurement; Microstrip; Semiconductor device measurement; Silicon germanium; Substrates; Testing; Flip-Chip; LTCC; Radial stub; Transition; em simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5516751

Filename

5516751