• DocumentCode
    3127841
  • Title

    A novel small capacitance RF-MOSFET with small-resistance Long-finger Gate Electrode

  • Author

    Nagase, Hirokazu ; Tanabe, Akira ; Hayashi, Yoshihiro

  • Author_Institution
    LSI Fundamental Res. Lab., NEC Electron. Corp., Sagamihara, Japan
  • fYear
    2010
  • fDate
    23-28 May 2010
  • Firstpage
    944
  • Lastpage
    947
  • Abstract
    We have developed a small capacitance RF-MOSFET with small-resistance long-finger gate electrode, which is featured by Direct Finger Contact (DFC) on the gate electrode in active region to reduce its resistance. The unique structure and layout, which is different from a conventional multiplied-short-finger MOSFET, suppress the parasitic capacitance around the gate electrode to obtain high fT. This layout-optimized DFC MOSFET is very useful for RF/Mixed signal SoCs in deep-sub-micron generations.
  • Keywords
    MOSFET; capacitance; electrodes; semiconductor device models; direct finger contact; parasitic capacitance; small capacitance RF-MOSFET; small-resistance long-finger gate electrode; CMOS process; CMOS technology; Contact resistance; Digital-to-frequency converters; Electrodes; Fingers; MOSFET circuits; Parasitic capacitance; Radio frequency; Wire; MOSFET; capacitance; fT; fmax; gate electrode; noise; resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
  • Conference_Location
    Anaheim, CA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-6056-4
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2010.5516755
  • Filename
    5516755
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3127841