Accurate modeling of trench isolation induced mechanical stress effects on MOSFET electrical performance

A new approach is presented aimed at modeling mechanical stress effects which impact MOSFET electrical behavior. It is successful in accounting for mobility variations experimentally evidenced on complex MOSFET geometries. The newly developed mobility model proves to be an efficient way to include mechanical stress effects into standard simulation models. We show that stress effects can and should be taken into account in the IC design phase in present and sub 90 nm nodes CMOS generations.