• DocumentCode
    3127912
  • Title

    The effective drive current in CMOS inverters

  • Author

    Na, M.-H. ; Nowak, E.J. ; Haensch, W. ; Cai, J.

  • Author_Institution
    IBM Corp., Essex Junction, VT, USA
  • fYear
    2002
  • fDate
    8-11 Dec. 2002
  • Firstpage
    121
  • Lastpage
    124
  • Abstract
    A simple but accurate expression for the effective drive current, I/sub eff/, for CMOS inverter delay is obtained. We show that the choice I/sub eff/=(I/sub H/+I/sub L/)/2, where I/sub L/=I/sub ds/(V/sub gs/=V/sub dd//2,V/sub ds/=V/sub dd/), and I/sub H/=I/sub ds/(V/sub gs/=V/sub dd/,V/sub ds/=V/sub dd//2) is defined, accurately predicts inverter delay when tested against compact models over a variety of conditions and against hardware results in 90 nm node technology. Furthermore, this definition of I/sub eff/ accurately captures the delay behavior of non-traditionally scaled devices, where mobility and V/sub T//V/sub dd/ are scaled in neither a regular nor uniform manner.
  • Keywords
    CMOS logic circuits; delay estimation; electric current; logic gates; CMOS inverter delay; delay behavior; effective drive current; nontraditionally scaled devices; CMOS technology; Delay effects; FETs; Integral equations; Inverters; Ring oscillators; Rivers; Semiconductor device modeling; Testing; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2002. IEDM '02. International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-7462-2
  • Type

    conf

  • DOI
    10.1109/IEDM.2002.1175793
  • Filename
    1175793