DocumentCode
3127926
Title
Scattering matrix based compact MOSFET model
Author
Wang, H. ; Gildenblat, G.
Author_Institution
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
125
Lastpage
128
Abstract
This work introduces a compact MOSFET model including quasi-ballistic effects. The proposed model is based on a combination of the one-flux scattering matrix approach with an advanced surface-potential-based model. The ballistic limit and traditional charge-sheet models are recovered as special cases. Circuit simulations demonstrate the practicality of the new approach to compact modeling.
Keywords
MOSFET; S-matrix theory; semiconductor device models; ballistic limit model; charge-sheet model; circuit simulations; compact MOSFET model; one-flux scattering matrix approach; quasi-ballistic effects; scattering matrix based model; surface-potential-based model; Circuit simulation; Computational efficiency; Effective mass; MOSFET circuits; Nonuniform electric fields; Physics; Radiative recombination; Scattering; Semiconductor devices; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175794
Filename
1175794
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