Title :
Scattering matrix based compact MOSFET model
Author :
Wang, H. ; Gildenblat, G.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
This work introduces a compact MOSFET model including quasi-ballistic effects. The proposed model is based on a combination of the one-flux scattering matrix approach with an advanced surface-potential-based model. The ballistic limit and traditional charge-sheet models are recovered as special cases. Circuit simulations demonstrate the practicality of the new approach to compact modeling.
Keywords :
MOSFET; S-matrix theory; semiconductor device models; ballistic limit model; charge-sheet model; circuit simulations; compact MOSFET model; one-flux scattering matrix approach; quasi-ballistic effects; scattering matrix based model; surface-potential-based model; Circuit simulation; Computational efficiency; Effective mass; MOSFET circuits; Nonuniform electric fields; Physics; Radiative recombination; Scattering; Semiconductor devices; Surface treatment;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175794
