DocumentCode
3127940
Title
Compact modeling of drain and gate current noise for RF CMOS
Author
Scholten, A.J. ; Tiemeijer, L.F. ; van Langevelde, R. ; Havens, R.J. ; Venezia, V.C. ; Zegers-van Duijnhoven, A.T.A. ; Neinhus, B. ; Jungemann, Christoph ; Klaasen, D.B.M.
Author_Institution
Philips Res. Labs., Eindhoven, Netherlands
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
129
Lastpage
132
Abstract
A model for RF CMOS circuit design is presented that is capable of predicting drain and gate current noise without adjusting any parameters. Additionally, the presence of (i) noise associated with avalanche multiplication, and (ii) shot noise of the direct-tunneling gate current in leaky dielectrics is revealed.
Keywords
CMOS integrated circuits; avalanche breakdown; equivalent circuits; integrated circuit design; integrated circuit modelling; integrated circuit noise; radiofrequency integrated circuits; shot noise; tunnelling; 0.18 micron; RF CMOS circuit design; avalanche multiplication; compact modeling; direct-tunneling gate current; drain current noise; gate current noise; leaky dielectrics; shot noise; Circuit noise; Circuit synthesis; Dielectrics; Electrical resistance measurement; Low-frequency noise; MOSFETs; Noise measurement; Predictive models; Radio frequency; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175795
Filename
1175795
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