DocumentCode :
3127950
Title :
Compact modelling of cyclostationary noise in semiconductor devices: a critical discussion
Author :
Bonani, F. ; Donati Guerrieri, S. ; Ghione, G.
Author_Institution :
Dipt. di Elettronica, Politeenico di Torino, Italy
fYear :
2002
fDate :
8-11 Dec. 2002
Firstpage :
133
Lastpage :
136
Abstract :
Available techniques for the determination of compact cyclostationary noise models starting from the modulation of small-signal, stationary noise models are described and compared in a critical discussion. Two modulation approaches are considered, and their results are checked against physics-based noise simulations for two simple devices, showing that device-dependent strategies and careful comparison with experimental results are necessary for devising accurate models.
Keywords :
modulation; random noise; semiconductor device models; semiconductor device noise; RF signal modulation; compact modelling; cyclostationary noise; device-dependent strategies; modulation approaches; physics-based noise simulations; semiconductor devices; small-signal stationary noise models; Active noise reduction; Circuit noise; Colored noise; Filtering; Fluctuations; Frequency modulation; Noise level; Semiconductor device noise; Semiconductor devices; White noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
Type :
conf
DOI :
10.1109/IEDM.2002.1175796
Filename :
1175796
Link To Document :
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