DocumentCode
3128088
Title
A new model of time evolution of gate leakage current after soft breakdown in ultra-thin gate oxides
Author
Hosoi, T. ; Lo Re, P. ; Kamakura, Y. ; Taniguchi, K.
Author_Institution
Dept. of Electron. & Inf. Syst., Osaka Univ., Japan
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
155
Lastpage
158
Abstract
The post-SBD degradation of ultra-thin gate oxides is investigated by means of experiments, theoretical modeling, and computer simulations. The gate leakage current after SBD increases gradually, and is finally limited by the parasitic resistance. A newly developed model shows that the gate leakage increase of post-SBD MOSFETs even under operating conditions causes a significant impact on LSIs in terms of the power consumption.
Keywords
MOS capacitors; MOSFET; electric breakdown; insulating thin films; leakage currents; semiconductor device models; semiconductor device reliability; LSIs; MOS capacitor; computer simulations; current saturation; gate leakage current; modeling; operating condition; parasitic resistance; post-SBD MOSFETs; power consumption; soft breakdown; time evolution; ultra-thin gate oxides; Computer simulation; Degradation; Electric breakdown; Energy consumption; Gate leakage; Leakage current; MOS capacitors; MOSFETs; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175802
Filename
1175802
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