DocumentCode :
3128238
Title :
Integrated Inp Mach-Zehnder Analog Modulator
Author :
Arrioja, D. A May ; LiKamWa, P. ; Shubin, I. ; Yu, P.
Author_Institution :
CREOL, Central Florida Univ., Orlando, FL
fYear :
2006
fDate :
Oct. 2006
Firstpage :
406
Lastpage :
407
Abstract :
We demonstrate the use of an area selective zinc indiffusion technique to fabricate an integrated InP Mach-Zehnder optical modulator. The modulator exhibits an extinction ratio of 19 dB and a voltage swing of plusmn2.3 volts at a wavelength of 1550 nm. The extinction ratio is only reduced to -18 dB when operated over a 40 nm range, with the center wavelength around 1560 nm. The Vpi voltage is increased from 4 volts at 1540 nm to 7.1 volts at 1580 nm. Very good electrical isolation is obtained between the contacts, which confirms the potential of the technique for the fabrication of photonic integrated circuits (PIC)
Keywords :
Mach-Zehnder interferometers; electro-optical modulation; extinction coefficients; indium compounds; integrated optoelectronics; optical fabrication; 1540 to 1580 nm; InP; Zn; area selective zinc indiffusion technique; electrical isolation; extinction ratio; integrated Mach-Zehnder analog modulator; optical modulator fabrication; photonic integrated circuit fabrication; voltage swing; Arm; Indium phosphide; Integrated optics; Optical device fabrication; Optical interferometry; Optical modulation; Optical waveguides; Photonics; Switches; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
Type :
conf
DOI :
10.1109/LEOS.2006.279172
Filename :
4054229
Link To Document :
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