Title :
Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)
Author :
Zhuang, W.W. ; Pan, W. ; Ulrich, B.D. ; Lee, J.J. ; Stecker, L. ; Burmaster, A. ; Evans, D.R. ; Hsu, S.T. ; Tajiri, M. ; Shimaoka, A. ; Inoue, K. ; Naka, T. ; Awaya, N. ; Sakiyama, K. ; Wang, Y. ; Liu, S.Q. ; Wu, N.J. ; Ignatiev, A.
Author_Institution :
Sharp Labs. of America, Camas, WA, USA
Abstract :
A novel nonvolatile memory Colossal Magnetoresistive (CMR) thin film resistor for Resistance RAM (RRAM) application has been characterized. A 1RIT RRAM test circuit based on 0.5 /spl mu/m CMOS has been fabricated. RRAM is a low power high-speed memory technology. The memory cell programming pulse is less than 5 V and pulse width as narrow as 10 ns. The high/low resistance ratio may be larger than 1,000. The results of a test array indicated that RRAM could be programmed by bit or by word.
Keywords :
CMOS memory circuits; colossal magnetoresistance; high-speed integrated circuits; low-power electronics; magnetoresistive devices; random-access storage; thin film resistors; 0.5 micron; 10 ns; 5 V; CMOS RAM; RRAM memory array; colossal magnetoresistive nonvolatile RAM; colossal magnetoresistive thin film resistor; low power high-speed memory technology; memory cell programming pulse; nonvolatile random access memory; nonvolatile resistance RAM; CMOS memory circuits; Circuit testing; Colossal magnetoresistance; Nonvolatile memory; Random access memory; Read-write memory; Resistors; Space vector pulse width modulation; Thin film circuits; Transistors;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175811
