Title :
A 4kb nMOS Static NVRAM With Extended 16kb Non-volatile Memory
Author :
Tjulkin, V.M. ; Miloshev, V.A.
Author_Institution :
Memory LSI Research and Design Laboratory
Keywords :
Circuits; EPROM; Laboratories; Large scale integration; MOS devices; Nonvolatile memory; Production; Random access memory; Read-write memory; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference, 1991. Digest of Technical Papers. 38th ISSCC., 1991 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-644-6
DOI :
10.1109/ISSCC.1991.689137
