Amorphous silicon pixel amplifier with /spl Delta/V/sub T/ compensation for low noise digital fluoroscopy

Author

Karim, K.S. ; Nathan, A. ; Rowlands, J.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

215

Lastpage

218

Abstract

The reported amorphous silicon (a-Si) pixel amplifier offers an improved signal-to-noise ratio compared to its traditional a-Si switch counterpart. Results from this research demonstrate that a-Si on-pixel amplifiers, coupled with a well established X-ray detection technology such as amorphous selenium, meet the minimum requirements for large area, real-time, low noise digital fluoroscopy.

Keywords

X-ray detection; amorphous semiconductors; amplifiers; compensation; elemental semiconductors; image sensors; integrated circuit noise; radiography; silicon; thin film transistors; SNR improvement; Si; X-ray detection technology; a-Si TFT technology; amorphous Se photoconductors; amorphous pixel amplifier; large area fluoroscopy; low noise digital fluoroscopy; real-time digital fluoroscopy; signal-to-noise ratio; threshold voltage variation compensation; Amorphous silicon; Circuit noise; Circuit testing; Linearity; Low-noise amplifiers; Pixel; Sensor arrays; Switches; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175816

Filename

1175816