DocumentCode :
3128378
Title :
A flexible low-power high-resolution integrated interface for capacitive sensors
Author :
Heidary, Ali ; Shalmany, Saleh Heidary ; Meijer, Gerard
Author_Institution :
Electron. Instrum. Lab., TUDelft, Delft, Netherlands
fYear :
2010
fDate :
4-7 July 2010
Firstpage :
3347
Lastpage :
3350
Abstract :
This paper presents a low-power high-resolution CMOS interface for capacitive sensors. The circuit is based on the use of a switched-capacitor charge amplifier, which converts the input capacitance to a voltage, which modulates the period of a relaxation oscillator. Auto-calibration is used to eliminate the undesired effects of transfer-parameter drift. The interface is suited for capacitive sensors with capacitance values from 1 pF up to 220 pF. Moreover, the measurement time can be set from about 100 μs up to 50 ms. For the 10 pF range, parasitic capacitances up to 680 pF can be handled while the settling accuracy is more than 14 bits. For a measurement time of 1s, the resolution can be as high as 20 bits. In the 10 pF range, for parasitic capacitance up to 680 pF, the measured nonlinearity error is less than 5×10-5. All these features have been achieved with a chip consuming only 3 mm2 of silicon area and 5 mW of power.
Keywords :
CMOS integrated circuits; capacitive sensors; low-power electronics; CMOS interface; auto-calibration; capacitive sensors; high-resolution integrated interface; input capacitance; parasitic capacitances; power 5 mW; relaxation oscillator; switched-capacitor charge amplifier; transfer-parameter drift; Capacitance; Capacitance measurement; Capacitors; Current measurement; Noise; Semiconductor device measurement; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics (ISIE), 2010 IEEE International Symposium on
Conference_Location :
Bari
Print_ISBN :
978-1-4244-6390-9
Type :
conf
DOI :
10.1109/ISIE.2010.5637984
Filename :
5637984
Link To Document :
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