Title :
Mass production worthy HfO/sub 2/-Al/sub 2/O/sub 3/ laminate capacitor technology using Hf liquid precursor for sub-100 nm DRAMs
Author :
Jung-Hyoung Lee ; Jong Pyo Kim ; Jong-Ho Lee ; Yun-Seok Kim ; Hyung-Seok Jung ; Nae-In Lee ; Ho-Kyu Kang ; Kwang-Pyuk Suh ; Mun-Mo Jeong ; Kyu-Taek Hyun ; Hion-Suck Baik ; Young Su Chung ; Xinye Liu ; Ramanathan, S. ; Seidel, T. ; Winkler, J. ; Londergan,
Author_Institution :
Adv. Process Dev. Project, Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea
Abstract :
For the first time, we successfully demonstrated MIS capacitor with ALD (Atomic Layer Deposition) grown HfO/sub 2/-Al/sub 2/O/sub 3/ laminate film using Hf liquid precursor (Hf(NEtMe)/sub 4/) with EOT of 22.5 /spl Aring/ and acceptable leakage currents (1.0 fA/cell at 1.65 V) which is comparable to the smallest reported value. Advantages of Hf(NEtMe)/sub 4/ liquid precursor for DRAM capacitor dielectric are excellent step coverage (94% on high aspect ratio(>40:1)) and reasonable throughput (over two times higher than that of HfCl/sub 4/ solid precursor). This study will provide practical solution for chip-making industry in terms of mass production worthy process for sub-100 nm DRAM capacitor.
Keywords :
DRAM chips; MIS capacitors; alumina; dielectric thin films; hafnium compounds; laminates; leakage currents; vacuum deposited coatings; 100 nm; DRAM; Hf liquid precursor; HfO/sub 2/-Al/sub 2/O/sub 3/; HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric film; MIS capacitor; atomic layer deposition; equivalent oxide thickness; leakage current; mass production; step coverage; throughput; Atomic layer deposition; Capacitors; Dielectric liquids; Hafnium oxide; Laminates; Leakage current; Mass production; Random access memory; Solids; Throughput;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175817
