Study of Organic Thin-film Transistor on Silicon Nitride Gate Dielectrics for Integration in Display Circuits and Arrays

Author

Li, Flora M. ; Wu, Yiliang ; Ong, Beng S. ; Nathan, Arokia

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.

fYear

2006

fDate

Oct. 2006

Firstpage

432

Lastpage

433

Abstract

The gate dielectric plays an important function in establishing field-effect operation in organic thin-film transistors (OTFTs). A variety of gate dielectric materials has been investigated and reported for OTFTs. This paper focuses on the use of silicon nitride (SiN_x), deposited by plasma-enhanced chemical vapour deposition (PECVD). Attractive attributes of SiN_x include low temperature deposition, large-area capability, and good dielectric strength. Various compositions of SiN_x films, ranging from N-rich to Si-rich, are explored to determine an optimal choice for OTFT fabrication. The development of OTFT pixel circuits with silicon nitride dielectric for active matrix display backplanes will also be addressed

Keywords

dielectric materials; field effect transistors; plasma CVD; silicon compounds; thin film transistors; OTFT fabrication; PECVD; SiN; dielectric strength; dielectrics surface property; field-effect operation; organic thin-film transistors; plasma-enhanced chemical vapour deposition; silicon nitride gate dielectric materials; Chemicals; Circuits; Dielectric materials; Displays; Organic thin film transistors; Plasma chemistry; Plasma materials processing; Plasma temperature; Silicon compounds; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Conference_Location

Montreal, Que.

Print_ISBN

0-7803-9555-7

Electronic_ISBN

0-7803-9555-7

Type

conf

DOI

10.1109/LEOS.2006.279200

Filename

4054242