Title :
Study of Organic Thin-film Transistor on Silicon Nitride Gate Dielectrics for Integration in Display Circuits and Arrays
Author :
Li, Flora M. ; Wu, Yiliang ; Ong, Beng S. ; Nathan, Arokia
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.
Abstract :
The gate dielectric plays an important function in establishing field-effect operation in organic thin-film transistors (OTFTs). A variety of gate dielectric materials has been investigated and reported for OTFTs. This paper focuses on the use of silicon nitride (SiNx ), deposited by plasma-enhanced chemical vapour deposition (PECVD). Attractive attributes of SiNx include low temperature deposition, large-area capability, and good dielectric strength. Various compositions of SiNx films, ranging from N-rich to Si-rich, are explored to determine an optimal choice for OTFT fabrication. The development of OTFT pixel circuits with silicon nitride dielectric for active matrix display backplanes will also be addressed
Keywords :
dielectric materials; field effect transistors; plasma CVD; silicon compounds; thin film transistors; OTFT fabrication; PECVD; SiN; dielectric strength; dielectrics surface property; field-effect operation; organic thin-film transistors; plasma-enhanced chemical vapour deposition; silicon nitride gate dielectric materials; Chemicals; Circuits; Dielectric materials; Displays; Organic thin film transistors; Plasma chemistry; Plasma materials processing; Plasma temperature; Silicon compounds; Thin film transistors;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.279200
