FinFET process refinements for improved mobility and gate work function engineering

Author

Yang-Kyu Choi ; Leland Chang ; Ranade, P. ; Jeong-Soo Lee ; Daewon Ha ; Balasubramanian, S. ; Agarwal, A. ; Ameen, M. ; Tsu-Jae King ; Bokor, J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

259

Lastpage

262

Abstract

Process refinements to improve the performance of FinFETs are described. Hydrogen annealing is shown to provide high surface quality on etched fin sidewalls for improved drive current and noise performance. Appropriate V/sub t/ is achieved in lightly doped p-channel FinFETs using Molybdenum (Mo) as the gate-electrode material for the first time. Multiple values of V/sub t/ are achieved via gate work function engineering by selective implantation of Mo.

Keywords

CMOS integrated circuits; MOSFET; annealing; carrier mobility; hydrogen; molybdenum; semiconductor device metallisation; semiconductor device noise; work function; CMOS FinFETs; FinFET process refinements; H annealing; Mo; Mo gate-electrode material; Mo selective implantation; double-gate MOSFET structure; drive current; etched fin sidewalls; gate work function engineering; high surface quality; lightly doped p-channel FinFETs; mobility improvement; noise performance; Annealing; CMOS technology; Degradation; Etching; FinFETs; Hydrogen; Lithography; MOSFET circuits; Rough surfaces; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175827

Filename

1175827