Title :
Nickel silicide metal gate FDSOI devices with improved gate oxide leakage
Author :
Krivokapic, Z. ; Maszara, W. ; Achutan, K. ; King, P. ; Gray, J. ; Sidorow, M. ; Zhao, E. ; Zhang, J. ; Chan, J. ; Marathe, A. ; Lin, M.-R.
Author_Institution :
Technol. Res. Group, AMD, Sunnyvale, CA, USA
Abstract :
Fully depleted SOI (FDSOI) devices with undoped channel require metal gates to achieve correct threshold voltages. We demonstrate metal gate FDSOI devices using NiSi gates with symmetric V/sub t/ for both NMOS and PMOS devices. Metal gates are stable on 2 nm gate oxide and show capacitance equivalent gate oxide thickness (CET) 0.6 nm thinner than poly gates. The gate leakage current is up to two orders of magnitude lower and high mobility is achieved (peak electron mobility 670 cm/sup 2//Vs and 170 cm/sup 2//Vs for holes).
Keywords :
MOSFET; carrier mobility; leakage currents; nickel compounds; semiconductor device metallisation; semiconductor device reliability; silicon-on-insulator; NMOS devices; NiSi; NiSi gates; PMOS devices; Si; fully depleted SOI devices; gate dielectric reliability; gate leakage current; high mobility; metal gate FDSOI devices; symmetric threshold voltage; undoped channel; Atherosclerosis; Electron mobility; Fabrication; Leakage current; MOS devices; Nickel; Silicidation; Silicides; Silicon; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175830
