Title :
High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 plus GHz bandwidth (850 nm)
Author :
Pei, Z. ; Liang, C.S. ; Lai, L.S. ; Tseng, Y.T. ; Hsu, Y.M. ; Chen, P.S. ; Lu, S.C. ; Liu, C.M. ; Tsai, M.-J. ; Liu, C.W.
Author_Institution :
ITRI, Electron. Res. & Service Organ. (ERSO), Hsinchu, Taiwan
Abstract :
The Si/sub 0.5/Ge/sub 0.5//Si multiple quantum wells (MQW) are placed between the base and collector of Si/SiGe heterojunction bipolar transistors as light absorbing layers. The phototransistor with high responsivity and bandwidth at 850 nm is demonstrated. Efficient near infrared (1,310 nm) photoresponse also achieved in this device. The results indicate the Si/SiGe phototransistor is suitable for front-end photoreceivers in the high-speed optical communication applications.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; optical receivers; phototransistors; quantum well devices; semiconductor materials; semiconductor quantum wells; silicon; 1.25 GHz; 1310 nm; 850 nm; Si/SiGe heterojunction bipolar transistors; Si/sub 0.5/Ge/sub 0.5/-Si; Si/sub 0.5/Ge/sub 0.5//Si multiple quantum wells; front-end photoreceivers; high bandwidth; high responsivity; high-speed optical communication applications; light absorbing layers; multiple quantum well SiGe/Si heterojunction phototransistors; near infrared photoresponse; Absorption; Bandwidth; Charge carrier processes; Germanium silicon alloys; Heterojunction bipolar transistors; Photoconductivity; Photodiodes; Phototransistors; Quantum well devices; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175837
