Title :
Optical Receivers in CMOS Using Ge-on-SOI Photodiodes
Author :
Schow, L. ; Koester, S.J. ; Schares, L. ; Dehlinger, G. ; John, R.A.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY
Abstract :
We report three different optical receivers, consisting of Ge photodiodes paired with CMOS ICs, that operate at bit rates as high as 19 Gb/s and consume as little as 1.1 mW/Gbps from a single 1.1-V supply at 10 Gb/s
Keywords :
CMOS integrated circuits; elemental semiconductors; germanium; integrated optoelectronics; optical receivers; photodiodes; silicon-on-insulator; 1.1 V; 10 Gbit/s; CMOS ICs; Ge-Si; Ge-on-SOI photodiodes; optical receivers; Absorption; Assembly; Bandwidth; CMOS technology; Optical amplifiers; Optical receivers; Parasitic capacitance; Photodiodes; Silicon; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.279213
