Title :
An 85–95.2 GHz transformer-based injection-locked frequency tripler in 65nm CMOS
Author :
Chen, Zhe ; Heydari, Payam
Author_Institution :
Univ. of California Irvine, Irvine, CA, USA
Abstract :
A W-band transformer-based injection-locked frequency tripler (T-ILFT) is designed and implemented in 65 nm standard CMOS technology using a 0.8 V supply voltage. The use of injection locking topology with on-chip transformer provides several advantages over conventional design. Occupying an chip area of 0.089 mm2 (including buffers), the T-ILFT achieves an input sensitivity of -15 dBm and a continuous locking range from 85 to 95.2 GHz with 4 dBm input power. The measured phase noise degradation from that of the input signal source is only 9.8dB at 1MHz offset. The harmonic suppressions for the first and second harmonics are measured to be 32.9 dB and 38.5 dB, respectively. The power consumption is only 5.2 mW for T-ILFT and 14.6 mW for output buffers. To the authors´ best knowledge, this T-ILFT achieves the highest operation frequency for injection-locked-based frequency multipliers, reported to date.
Keywords :
CMOS integrated circuits; MIMIC; frequency multipliers; harmonics suppression; millimetre wave frequency convertors; phase noise; CMOS techonology; MIMIC; W-band; frequency 85 GHz to 95.2 GHz; harmonic suppressions; injection locking topology; millimetre wave frequency convertors; phase noise degradation; power 14.6 mW; power 5.2 mW; size 65 nm; transformer-based injection-locked frequency tripler; voltage 0.8 V; CMOS technology; Degradation; Frequency; Harmonics suppression; Injection-locked oscillators; Noise measurement; Phase measurement; Phase noise; Semiconductor device measurement; Topology;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5516815