DocumentCode
3129166
Title
Transistors with dual work function metal gates by single full silicidation (FUSI) of polysilicon gates
Author
Maszara, W.P. ; Krivokapic, Z. ; King, P. ; Goo, J.-S. ; Lin, M.-R.
Author_Institution
Technol. Res. Group, AMD, Sunnyvale, CA, USA
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
367
Lastpage
370
Abstract
Metal gate electrodes with two different work functions, /spl sim/4.5 and /spl sim/4.9 eV for NMOS and PMOS, respectively, were obtained by single-step full silicidation of poly gates. Reduction of polysilicon depletion was /spl sim/0.25 nm. Pile-up of arsenic at the NMOS dielectric is believed responsible for NiSi work function modification. Metal gate may offer little or no gate current reduction for the same T/sub oxinv/ as poly gate.
Keywords
MOSFET; semiconductor device metallisation; work function; NMOS transistor; NiSi; PMOS transistor; Si:As; arsenic pile-up; dual work function metal gate; polysilicon depletion; polysilicon gate electrode; single-step full silicidation; Capacitance; Dielectrics; Electric resistance; Electrodes; MOS devices; MOSFETs; Nickel; Silicidation; Silicides; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175854
Filename
1175854
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