DocumentCode :
3129177
Title :
Flash-the memory technology of the future that´s here today
Author :
Wett, Tom ; Levy, Stuart
Author_Institution :
Div. of Mil. & Special Products, Intel Corp., Chandler, AZ, USA
Volume :
1
fYear :
1995
fDate :
22-26 May 1995
Firstpage :
359
Abstract :
The traditional method of designing memory systems was to use DRAM and SRAM for volatile storage and either EPROM or first generation FLASH for non-volatile storage. Today´s embedded avionics and military designers can take advantage of the new generation of Flash memories. Flash memory has come of age very quickly. Flash memory chips are available in special environment temperature ranges in speeds as fast as 85 ns and as dense as 8 Mbits. We expect to see special environment parts that have 161Mbits and 75 ns access time in the near future. These fast access times along with very high densities, make Flash a great fit into applications that used to use several ROM, EEPROMs or DRAMs. To help show that Flash is a natural fit into designs that up until now have been using ROM, EEPROM and DRAM, a detailed analysis of Flash technology and how it compares to other memory is provided
Keywords :
avionics; integrated memory circuits; military avionics; military equipment; 16 Mbit; 75 ns; 8 Mbit; 85 ns; DRAM; EEPROM; EPROM; ETOX; Flash memory chips; NAND; NOR; PEROM; comparisons; embedded avionics; fast access times; military designers; nonvolatile storage; Aerospace electronics; Design engineering; Design methodology; EPROM; Flash memory; Hardware; Nonvolatile memory; Random access memory; Read only memory; Systems engineering and theory; Temperature distribution; User interfaces; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Aerospace and Electronics Conference, 1995. NAECON 1995., Proceedings of the IEEE 1995 National
Conference_Location :
Dayton, OH
ISSN :
0547-3578
Print_ISBN :
0-7803-2666-0
Type :
conf
DOI :
10.1109/NAECON.1995.521965
Filename :
521965
Link To Document :
بازگشت