Title :
Advanced Si/sub 1-x/Gex source/drain and contact technologies for sub-70 nm CMOS
Author :
Ozturk, Mehmet C. ; Liu, Jing ; MO, Hongxiang ; Pesovic, Nemanja
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
Future CMOS technology nodes require super-abrupt source/drain junctions with very low contact resistivities. In this paper, we examine properties of ultra-shallow junctions formed by selective deposition of in-situ doped Si/sub 1-x/Ge/sub x/ alloys. Contacts to these junctions consist of self-aligned Ni and Pt germanosilicide contacts formed via solid phase reactions. We present super-abrupt junctions with SIMS abruptness figures under 2.2 nm/decade and contact resistivities near 10/sup -8/ ohm-cm/sup 2/. The results indicate that the technology can meet source/drain requirements of all technology nodes included in the 2001 edition of International Technology Roadmap for Semiconductors.
Keywords :
CMOS integrated circuits; Ge-Si alloys; II-VI semiconductors; MOSFET; contact resistance; etching; integrated circuit metallisation; 20 to 70 nm; CMOS technology; MOSFET; Ni(SiGe); Pt(SiGe); SIMS abruptness figures; Si/sub 1-x/Ge/sub x/; contact resistivities; source/drain technologies; super-abrupt junctions; ultra-shallow junctions; Annealing; CMOS technology; Conductivity; Contact resistance; Doping; High K dielectric materials; Immune system; MOSFET circuits; Silicides; Silicon;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175856
