DocumentCode
3129279
Title
Temporal and spatial current stability of the integrated LD-MOSFET/field emission arrays
Author
Ching-yin Hong ; Akinwande, A.I.
Author_Institution
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
393
Lastpage
396
Abstract
Emission current stability and spatial uniformity of field emission devices are improved when a lightly doped drain-MOSFET (LD-MOSFET) is integrated with a field emission array (FEA) and the integrated device is operated in the regime where the emission current is controlled by the supply of electrons to the surface. The same structure results in low threshold voltage of less than 0.5 V. An on/off current ratio of 1000:1 was obtained using a modest MOSFET gate voltage swing of 0.5 V.
Keywords
MOSFET; carrier density; inversion layers; stability; vacuum microelectronics; 0.5 V; MOSFET gate voltage swing; emission current stability; integrated LD-MOSFET/field emission arrays; lightly doped drain-MOSFET; on/off current; spatial current stability; temporal stability; threshold voltage; Electron emission; Field emitter arrays; Lithography; Low voltage; MOSFET circuits; Optical arrays; Silicon; Stability; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175861
Filename
1175861
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