Organic field emission device integrated with organic transistor

We demonstrate a low-cost process which forms field emitters and transistors both from organic materials at room temperature. By combining them in series, a field emitter is produced with reduced noise and low voltage control (approximately 20 volts from full-on to full-off). All steps are accomplished entirely at room temperature without an expensive gate structure. We show that noise is reduced from 37% RMS without the integrated transistor controlling the current to 1.8% with the integrated transistor in high vacuum. Resistance to noise caused by gas exposure is also demonstrated up to pressures of 10/sup -6/ torr. This provides a new low-cost emitter and circuit architecture which can be extended to a large number of FEA materials.