DocumentCode
3129316
Title
Field electron emission device using silicon nano-wires
Author
Sawada, Kazuaki ; Futagawa, Masato ; Arai, Yuji ; Kawano, Takeshi ; Takao, Hidekuni ; Ishida, Makoto
Author_Institution
Dept. of Electr. & Electron. Eng., Toyoliashi Univ. of Technol., Aichi, Japan
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
401
Lastpage
404
Abstract
We propose a novel smart field electron emission device using silicon nano-wires, and demonstrate field electron emission with a quite low operation voltage from a gated silicon nano-wire. The threshold voltage is about 13V and the value is similar to gated carbon-nanotube field emitter. The emission current reaches 10nA at 15V of gate voltage.
Keywords
elemental semiconductors; intelligent structures; nanowires; silicon; vacuum microelectronics; 10 nA; 13 V; 15 V; Si; emission current; field electron emission device; gated nano-wires; operation voltage; smart device; threshold voltage; Carbon nanotubes; Circuits; Electron emission; MOSFETs; Nanoscale devices; Probes; Silicon; Size control; Threshold voltage; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175863
Filename
1175863
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