High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric

Author

Shang, Huiling ; Okorn-Schmidt, H. ; Chan, Kevin K. ; Copel, Matthew ; Ott, John A. ; Kozlowski, P.M. ; Steen, S.E. ; Cordes, S.A. ; Wong, H.-S.P. ; Jones, E.C. ; Haensch, W.E.

Author_Institution

Div. of Res., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

441

Lastpage

444

Abstract

We report Ge p-channel MOSFETs with a thin gate stack of Ge oxynitride and LTO on bulk Ge substrate without a Si cap layer. Excellent device characteristics (IV and CV) are achieved with subthreshold slope 82mV/dec. /spl sim/40% hole mobility enhancement is obtained over the Si control with a thermal SiO/sub 2/ gate dielectric. To our knowledge, this is the first demonstration of Ge MOSFETs with less than 10nm thick gate dielectric and less than 100mV/dec subthreshold slope.

Keywords

MOSFET; dielectric thin films; elemental semiconductors; germanium; hole mobility; nitridation; Ge; Ge oxynitride gate dielectric; Ge-GeON; LTO; bulk Ge substrate; device characteristics; drive current enhancement; high mobility Ge p-channel MOSFETs; hole mobility enhancement; low temperature oxide; subthreshold slope; thin gate stack; transconductance enhancement; Annealing; Artificial intelligence; Dielectric devices; Dielectric substrates; Electron mobility; Germanium silicon alloys; MOS capacitors; MOSFETs; Scattering; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175873

Filename

1175873