High performance damascene gate CMOSFETs with recessed channel formed by plasma oxidation and etching method (RC-POEM)

Author

Matsuo, Kouji ; Sekine, Katsuyuki ; Saito, Tomohiro ; Nakajima, Kazuaki ; Suguro, Kyoichi ; Tsunashima, Yoshitaka

Author_Institution

Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

445

Lastpage

448

Abstract

We report on high performance transistors using a new recessed channel formed by plasma oxidation and etching method (RC-POEM). The advantages of RC-POEM are: [a] lowering source/drain extension sheet resistance while suppressing lateral diffusion of extension region; [b] forming pseudo-raised extension using only plasma oxidation and wet etching. RC-POEM suppressed short channel effects down to 35nm physical gate length and high drive current were obtained.

Keywords

MOSFET; capacitance; diffusion; oxidation; sputter etching; 35 nm; RC-POEM; damascene gate CMOSFETs; drive current; extension region; lateral diffusion; physical gate length; plasma etching method; plasma oxidation; pseudo-raised extension; recessed channel; short channel effects; source/drain extension sheet resistance; wet etching; CMOSFETs; Dry etching; High K dielectric materials; Oxidation; Plasma applications; Plasma immersion ion implantation; Plasma materials processing; Plasma sources; Plasma temperature; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175874

Filename

1175874