An Integrated 1Ã\x973 InP Photonic Switch

An integrated 1×3 optical switch that operates using the principle of carrier-induced refractive index change in InGaAsP multiple quantum wells is demonstrated. The device is very simple, only requiring currents to be applied to two electrodes for complete operational control. An area-selective zinc in-diffusion process is used to channel the currents into the multiple quantum wells, thereby enhancing the efficiency of the carrier-induced effects. This results in a low electrical power consumption, allowing the switch to be operated uncooled and under d.c. current conditions. The crosstalk between channels is better than ¿17 dB over a range of 50 nm centered at 1565 nm.