A low on-resistance trench lateral power MOSFET in a 0.6/spl mu/m smart power technology for 20-30 V applications

Author

Fujishima, N. ; Iwaya, A. ; Sawada, A. ; Tabuchi, K. ; Kajiwara, S. ; Mochizuki, K.

Author_Institution

Device Technol. Lab., Fuji Electr. Corp. R&D Ltd., Nagano, Japan

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

455

Lastpage

458

Abstract

A 30V trench lateral power MOSFET (TLPM) has been successfully integrated with a 0.6/spl mu/m smart power technology based on an existing Bi-CDMOS process. A specific on-resistance of 16m/spl Omega/-mm/sup 2/ has been realized for the TLPM with a breakdown voltage of 35V without significantly compromising the performance of other devices in the technology. This is the lowest specific on-resistance in this voltage range, obtained to date, for a lateral power MOSFET embedded with low voltage devices.

Keywords

BiCMOS analogue integrated circuits; MOSFET; integrated circuit reliability; power integrated circuits; semiconductor device breakdown; 0.6 micron; 20 to 30 V; 35 V; Bi-CDMOS process; breakdown voltage; low voltage devices; on-resistance; power ICs; smart power technology; trench lateral power MOSFET; Bipolar transistors; CMOS technology; Electrodes; Etching; Laboratories; Low voltage; MOSFET circuits; Power MOSFET; Power integrated circuits; Research and development;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175877

Filename

1175877