Title :
Study on MEMS tunneling effect gyroscope
Author :
Yunbo, Shi ; Qiong, Zhang ; Junhong, Li ; Xiaogang, Tong ; Zongmin, Ma ; Jun, Liu
Author_Institution :
Nat. Key Lab. for Electron. Meas. & Technol., North Univ. of China, Taiyuan, China
Abstract :
A new structure of tunneling gyroscope which is high-accuracy and low-range was presented in this paper, as well as the structure and the operating principles of this gyroscope were analyzed. Besides, the simulations were made in this paper which is close to the principle. Then the structure was fabricated by MEMS technological processes. And its tunneling effect was tested by HP4156C high precise semiconductor parameter test instrumentation, there is linear relationship between the square of drive voltage and the logarithm of tunneling current through the test results, so it shows that the tunneling current is validate.
Keywords :
elemental semiconductors; gyroscopes; microfabrication; microsensors; silicon; tunnelling; HP4156C high precise semiconductor parameter test instrumentation; MEMS gyroscope design; MEMS technological process; MEMS tunneling effect gyroscope fabrication; Si; drive voltage; tunneling current; Circuits; Electrodes; Feedback control; Frequency; Gyroscopes; Laboratories; Micromechanical devices; Semiconductor device testing; Tunneling; Voltage control;
Conference_Titel :
Industrial Electronics, 2009. ISIE 2009. IEEE International Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-4347-5
Electronic_ISBN :
978-1-4244-4349-9
DOI :
10.1109/ISIE.2009.5219760
