Title :
Photonic Crystal Microcavity with Colloidal PbSe Quantum Dots
Author :
Jiang, Hao ; Sabarinathan, J. ; Xu, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Western Ontario, London
Abstract :
Photonic crystal microcavities (PCM) have the ability to control and modify the spontaneous emission from quantum dots embedded inside. These devices have several applications one of which is their potential to realize single photon sources. Typically semiconductor quantum dots are grown embedded as a thin layer in a semiconductor-based heterostructure such as GaAs and then a PCM is fabricated into the wafer. This involves relatively complex processes and is limited to certain substrates only. Since Silicon-on-insulator (SOI) substrates and silicon fabrication technology are well developed, we have fabricated PCMs on SOI wafer followed by dispersing colloidal PbSe quantum dots inside photonic crystal cavity holes through a polymer which is spin coated on the device. This process is simple and cost effective
Keywords :
IV-VI semiconductors; colloids; lead compounds; microcavities; optical fabrication; optical materials; photoluminescence; photonic crystals; polymers; semiconductor quantum dots; silicon-on-insulator; spin coating; spontaneous emission; PCM fabrication; PbSe; SOI wafer; Si-SiO2; colloidal PbSe quantum dots; photoluminescence; photonic crystal microcavity; polymer; semiconductor quantum dots; semiconductor-based heterostructure; spin coating; spontaneous emission; Fabrication; Gallium arsenide; Microcavities; Optical control; Phase change materials; Photonic crystals; Quantum dots; Silicon on insulator technology; Spontaneous emission; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278761