Title :
NBTI mechanism in ultra-thin gate dielectric - nitrogen-originated mechanism in SiON
Author :
Mitani, Yuichiro ; Nagamine, Makoto ; Satake, Hideki ; Toriumi, Akira
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
We have investigated the mechanism of negative bias temperature (NBT) degradation of p/sup +/-gate p-MOSFETs having SiON and SiO/sub 2/ films. As a result, it was found that NBT degradation of SiO/sub 2/ is improved by fluorine incorporation, while no effect is observed in that of SiON, and that the activation energy of NBT degradation in SiON is lower than that in SiO/sub 2/. From these experimental results, it is inferred that nitrogen-originated NBT degradation dominates NBT degradation in SiON. It was also found that non-energetic holes existing in the inversion layer contribute to NBT degradation for both SiON and SiO/sub 2/ films, and that the oxide field is indispensable for NBT degradation.
Keywords :
MOSFET; dielectric thin films; fluorine; nitrogen; semiconductor device reliability; silicon compounds; F; F incorporation; N; N-originated mechanism; SiO/sub 2/; SiO/sub 2/ films; SiON; SiON films; activation energy; inversion layer; negative bias temperature degradation; negative bias temperature instability; nonenergetic holes; oxide field; p-MOSFETs; p/sup +/-gate PMOSFETs; ultra-thin gate dielectric; Atomic measurements; Degradation; Dielectric substrates; Facsimile; Laboratories; Large scale integration; MOSFETs; Materials science and technology; Niobium compounds; Titanium compounds;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175891
