Title :
Future 1T1C FRAM technologies for highly reliable, high density FRAM
Author :
Lee, S.Y. ; Kim, K.
Author_Institution :
Adv. Technol. Dev., Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
Abstract :
Recent 32 Mb FRAM technologies realizing 0.25 /spl mu/m/15F2 cell are introduced and key integration technologies for future highly reliable, high density FRAM are suggested. Etchless capacitor technology and MOCVD PZT technology are the promising solutions for realizing future highly reliable, high density FRAM beyond 32 Mb density.
Keywords :
ferroelectric storage; integrated circuit reliability; random-access storage; 0.25 micron; 1T1C FRAM technology; 32 Mbit; MOCVD PZT technology; PZT; PbZrO3TiO3; etchless capacitor technology; high-density memory; reliability; Capacitors; Chemistry; Electrodes; Etching; Ferroelectric films; Nonvolatile memory; Oxidation; Plugs; Polarization; Random access memory;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175900
