Title :
A new multi-channel dual-gate poly-Si TFT employing excimer laser annealing recrystallization on pre-patterned a-Si thin film
Author :
Song, I.H. ; Kim, C.H. ; Kang, S.H. ; Nam, W.-J. ; Han, M.K.
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
We have proposed a new excimer laser annealing method which employs a floating a-Si thin film structure and the effect of pre-patterning. The proposed ELA produces two-dimensional grain growth so that a high quality grain structure can be obtained. We have also fabricated poly-Si TFTs by adapting the proposed ELA method. The dual-gate structure is used for the elimination of grain boundaries in the channel. The proposed poly-Si TFT exhibits high performance electrical characteristics, e.g. a high mobility of 504 cm/sup 2//V sec and low subthreshold slope of 0.337 V/dec.
Keywords :
carrier mobility; elemental semiconductors; grain boundaries; grain growth; laser beam annealing; recrystallisation annealing; silicon; thin film transistors; Si; dual-gate structure; excimer laser annealing recrystallization; floating a-Si thin film structure; grain boundary elimination; high mobility; high performance electrical characteristics; high quality grain structure; low subthreshold slope; multi-channel dual-gate poly-Si TFT; pre-patterned a-Si thin film; pre-patterning; two-dimensional grain growth; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Annealing; Grain boundaries; Grain size; Semiconductor films; Substrates; Temperature; Thermal conductivity; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175903
