Title :
Modeling of metal-induced-lateral-crystallization mechanism for optimization of high performance thin-film-transistor fabrication
Author :
Cheng, C.F. ; Poon, M.C. ; Kok, C.W. ; Chan, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
A model to predict metal-induced-lateral-crystallization (MILC) growth rate, polysilicon grain size and metal impurity distribution is proposed. The accuracy of the model has been validated by experimental results obtained from SIMS analysis. It is believed that the model gives important information for superior MILC device fabrication and development.
Keywords :
elemental semiconductors; grain boundaries; grain size; impurity distribution; recrystallisation annealing; secondary ion mass spectra; semiconductor process modelling; silicon; thin film transistors; 525 to 625 C; MILC device fabrication; SIMS analysis; Si; annealing temperature; growth rate; metal impurity distribution; metal-induced-lateral-crystallization mechanism; model; polysilicon TFT fabrication optimization; polysilicon grain size; Annealing; Atomic layer deposition; Crystallization; Fabrication; Grain boundaries; Grain size; Impurities; Microwave integrated circuits; Nickel; Silicides;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175905
