DocumentCode
3130183
Title
Analysis of reliability in low-temperature poly-Si thin film transistors using pico-second time-resolved emission microscope
Author
Uraoka, Y. ; Hirai, N. ; Yano, H. ; Hatayama, T. ; Fuyuki, T.
Author_Institution
Dept. of Mater. Sci., Nara Inst. of Sci. & Technol., Japan
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
577
Lastpage
580
Abstract
Analyzed degradation of n-ch TFT under dynamic stress using pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Further we have also obtained hot electron current during the pulse fall using the device simulation considering transient effect.
Keywords
electron microscopy; elemental semiconductors; hot carriers; semiconductor device measurement; semiconductor device reliability; silicon; thin film transistors; Si; device simulation; dynamic stress; hot electron current; pico-second time-resolved emission microscope; polysilicon; pulse fall edge; reliability; thin film transistors; transient effect; Degradation; Frequency; Materials science and technology; Microscopy; Photonics; Pulse generation; Pulse measurements; Stress measurement; Thin film transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175907
Filename
1175907
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