Title :
Analysis of reliability in low-temperature poly-Si thin film transistors using pico-second time-resolved emission microscope
Author :
Uraoka, Y. ; Hirai, N. ; Yano, H. ; Hatayama, T. ; Fuyuki, T.
Author_Institution :
Dept. of Mater. Sci., Nara Inst. of Sci. & Technol., Japan
Abstract :
Analyzed degradation of n-ch TFT under dynamic stress using pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Further we have also obtained hot electron current during the pulse fall using the device simulation considering transient effect.
Keywords :
electron microscopy; elemental semiconductors; hot carriers; semiconductor device measurement; semiconductor device reliability; silicon; thin film transistors; Si; device simulation; dynamic stress; hot electron current; pico-second time-resolved emission microscope; polysilicon; pulse fall edge; reliability; thin film transistors; transient effect; Degradation; Frequency; Materials science and technology; Microscopy; Photonics; Pulse generation; Pulse measurements; Stress measurement; Thin film transistors; Voltage;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175907
