• DocumentCode
    3130229
  • Title

    GaN films fabricated by ammoniating electrodeposited layers

  • Author

    Wang, H. ; Chen, X.Y. ; Ng, A.M.C. ; Fang, F. ; Djurisic, Aleksandra B. ; Chan, W.K.

  • Author_Institution
    Dept. of Phys., Univ. of Hong Kong, Hong Kong, China
  • fYear
    2009
  • fDate
    13-17 July 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    GaN films have been fabricated by ammoniating electrodeposited films. We have investigated the influence of electrodeposition parameters on the morphologies and structures of electrodeposited layers on Si(100) subtrates by using SEM and XRD.
  • Keywords
    III-V semiconductors; X-ray diffraction; electrodeposits; gallium compounds; scanning electron microscopy; semiconductor growth; silicon; wide band gap semiconductors; GaN; Si(100); X-ray diffraction; ammoniating electrodeposited layers; scanning electron microscopy; semiconductor growth; Annealing; Gallium nitride; III-V semiconductor materials; Molecular beam epitaxial growth; Morphology; Optical films; Scanning electron microscopy; Semiconductor films; Substrates; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-4102-0
  • Electronic_ISBN
    978-1-4244-4103-7
  • Type

    conf

  • DOI
    10.1109/OECC.2009.5219909
  • Filename
    5219909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3130229