Title :
Cu dual damascene interconnects with in-situ fluorinated carbon-nitride (FCN: -C=N(F)-) barrier layers in low-k organic film
Author :
Ohtake, H. ; Saito, S. ; Tada, M. ; Harada, Y. ; Onodera, T. ; Hayashi, Y.
Author_Institution :
Silicon Syst. Res. Labs., NEC Corp., Kanagawa, Japan
Abstract :
The highly reliable low-k/Cu dual damascene interconnects (DDI) with in-situ fluorinated carbon-nitride (FCN) barrier was successfully obtained in an organosiloxane film. Using C/sub x/F/sub y/N/sub 2/-base plasma, the DDI etching is achieved by sidewall-deposited fluorocarbon polymers. In addition, the etched-surface is covered with the FCN barrier, which suppresses the Cu diffusion.
Keywords :
copper; dielectric thin films; diffusion barriers; integrated circuit interconnections; organic compounds; sputter etching; C/sub x/F/sub y/N/sub x/ plasma etching; CNF; Cu; Cu diffusion; Cu dual damascene interconnect; in-situ fluorinated carbon-nitride barrier layer; low-k dielectric film; organosiloxane film; sidewall-deposited fluorocarbon polymer; Cleaning; Etching; Fabrication; Plasma applications; Plasma chemistry; Plasma measurements; Polymer films; Protection; Semiconductor films; Silicon;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175912
