DocumentCode
3130284
Title
Cu dual damascene interconnects with in-situ fluorinated carbon-nitride (FCN: -C=N(F)-) barrier layers in low-k organic film
Author
Ohtake, H. ; Saito, S. ; Tada, M. ; Harada, Y. ; Onodera, T. ; Hayashi, Y.
Author_Institution
Silicon Syst. Res. Labs., NEC Corp., Kanagawa, Japan
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
599
Lastpage
602
Abstract
The highly reliable low-k/Cu dual damascene interconnects (DDI) with in-situ fluorinated carbon-nitride (FCN) barrier was successfully obtained in an organosiloxane film. Using C/sub x/F/sub y/N/sub 2/-base plasma, the DDI etching is achieved by sidewall-deposited fluorocarbon polymers. In addition, the etched-surface is covered with the FCN barrier, which suppresses the Cu diffusion.
Keywords
copper; dielectric thin films; diffusion barriers; integrated circuit interconnections; organic compounds; sputter etching; C/sub x/F/sub y/N/sub x/ plasma etching; CNF; Cu; Cu diffusion; Cu dual damascene interconnect; in-situ fluorinated carbon-nitride barrier layer; low-k dielectric film; organosiloxane film; sidewall-deposited fluorocarbon polymer; Cleaning; Etching; Fabrication; Plasma applications; Plasma chemistry; Plasma measurements; Polymer films; Protection; Semiconductor films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175912
Filename
1175912
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