Additional scattering effects for mobility degradation in Hf-silicate gate MISFETs

Author

Yamaguchi, T. ; Iijima, R. ; Ino, T. ; Nishiyama, A. ; Satake, H. ; Fukushima, N.

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

621

Lastpage

624

Abstract

By controlling the crystallization in Hf-silicate gate dielectrics, we directly observed that the crystallized-HfO/sub 2/ portions in Hf-silicate degrade the electron mobility in Hf-silicate gate MISFETs. The degradation is proportional to the amount of crystallized portions in the Hf-silicate, which induce Coulomb scattering, in addition to substrate impurity scattering. Furthermore, we quantitatively investigated the contributions of the additional scattering to the electron mobility in Hf-silicate gate MISFETs.

Keywords

MISFET; crystallisation; dielectric thin films; electron mobility; hafnium compounds; impurity scattering; interface states; rapid thermal annealing; Coulomb scattering; Hf-silicate gate MISFETs; HfSiO/sub 4/-Si; additional scattering effects; crystallization control; crystallized-HfO/sub 2/ portions; electron mobility degradation; high temperature annealing; interface-state density; mobility degradation; substrate impurity scattering; Capacitance-voltage characteristics; Crystallization; Degradation; Dielectric substrates; Electrodes; Electron mobility; Hafnium; MISFETs; Scattering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175916

Filename

1175916