Advanced gate dielectric materials for sub-100 nm CMOS

Author

Iwai, H. ; Ohmi, S. ; Akama, S. ; Ohshima, C. ; Kikuchi, A. ; Kashiwagi, I. ; Taguchi, J. ; Yamamoto, H. ; Tonotani, J. ; Kim, Y. ; Ueda, I. ; Kuriyama, A. ; Yoshihara, Y.

Author_Institution

Frontier Collaborative Res. Center, Tokyo Inst. of Technol., Yokohama, Japan

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

625

Lastpage

628

Abstract

Properties of lanthanide oxides for gate insulators are studied with comparison to ZrO/sub 2/ and HfO/sub 2/. Molecular beam epitaxy (MBE) was used for the deposition of the ´amorphous´ high-k films on n-type [100] Si substrates. The deposited films were annealed in N/sub 2/ or O/sub 2/ ambient at different temperatures and Al electrodes were deposited to fabricate MIS capacitors. Our La/sub 2/O/sub 3/ results showed excellent characteristics such as J = 5.5/spl times/10/sup -4/ cm/sup -2/ @ EOT = 0.61 nm.

Keywords

MIS capacitors; annealing; dielectric thin films; lanthanum compounds; leakage currents; molecular beam epitaxial growth; 0.61 nm; 100 nm; Al electrodes; Al-La/sub 2/O/sub 3/-Si; EOT; La/sub 2/O/sub 3/ gate dielectric materials; MBE; MIS capacitors; N/sub 2/ ambient annealing; O/sub 2/ ambient annealing; Si; amorphous high-k films; gate insulators; n-type [100] Si substrates; sub-100 nm CMOS; Amorphous materials; Annealing; Dielectric materials; Dielectric substrates; Dielectrics and electrical insulation; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Molecular beam epitaxial growth; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175917

Filename

1175917