DocumentCode
3130497
Title
Lateral extension engineering using nitrogen implantation (N-tub) for high-performance 40-nm pMOSFETs
Author
Momiyama, Y. ; Okabe, K. ; Nakao, H. ; Kase, M. ; Kojima, M. ; Sugii, T.
Author_Institution
Fujitsu Labs. Ltd., Akiruno, Japan
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
647
Lastpage
650
Abstract
Lateral extension engineering using a nitrogen-implantation (N-tub) process has enabled high performance 40-nm pMOSFETs that overcome the trade-off between drive current and short channel immunity. The data show that an N dose of above 1/spl times/10/sup 14/ cm/sup -2/ effectively suppresses B diffusion, especially in the lateral extension tail. As a result, we realized a 13% improvement in CV/I from conventional process.
Keywords
MOSFET; ion implantation; leakage currents; nanotechnology; nitrogen; rapid thermal annealing; secondary ion mass spectra; 40 nm; B diffusion suppression; N implantation; NO-nitrided oxynitride gate insulator; RTA process; SIMS depth profiles; Si:N; drive current; gate leakage current; high-performance 40-nm pMOSFETs; junction leakage current; lateral extension engineering; short channel immunity; Fabrication; Hot carriers; Impurities; Isolation technology; Laboratories; Leakage current; MOSFETs; Nitrogen; Reliability engineering; Tail;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175922
Filename
1175922
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