Low-current spin transfer torque MRAM

Author

Worledge, D. ; Annunziata, A.J. ; Brown, S. ; Chen, W. ; Harms, J. ; Hu, G. ; Kim, Y. ; Kothandaraman, C. ; Lauer, G. ; Lee, J. ; Liu, L. ; Murthy, S. ; Nowak, J. ; O´Sullivan, E. ; Park, J. ; Robertazzi, R. ; Sun, J.Z. ; Trouilloud, P.

Author_Institution

IBM-Micron MRAM Alliance, Yorktown Heights, NY, USA

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

This talk presents the discovery of interface perpendicular anisotropy in the Ta-CoFeB-MgO system and its development for perpendicular magnetic tunnel junctions used in spin transfer torque magnetic random access memories. Experimental results show low switching current threshold and high efficiency. Theoretical predictions for further lowering of the switching current is also discussed.

Keywords

MRAM devices; boron alloys; cobalt alloys; interface magnetism; iron alloys; magnesium compounds; magnetic tunnelling; perpendicular magnetic anisotropy; spin dynamics; tantalum; MRAM; Ta-CoFeB-MgO; interface perpendicular anisotropy; magnetic random access memories; perpendicular magnetic tunnel junctions; spin transfer torque; switching current threshold; Current measurement; Junctions; Random access memory; Switches; Temperature measurement; Torque; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7157006

Filename

7157006