Title :
Linearity and gain characteristics of AlGaN/GaN HEMTs
Author :
Wu, Y.F. ; Chavarkar, P.M. ; Moore, M. ; Parikh, P. ; Mishra, U.K.
Author_Institution :
Cree Lighting Co., USA
Abstract :
AlGaN/GaN HEMTs exhibited high cut-off frequencies at low current levels, which enabled linear operation at close to class-B biases. When biased at 35V and 40mA/mm (4% of channel current), excellent linearity performance including simultaneous 3/sup rd/ order intermodulation (IM3) of -30dBc and PAE of 40% was obtained at 4 GHz, with only -2.6dB back off. However, the gain reduction at high current levels made class-A operation less favorable. These gain characteristics are believed to be related to the ratio of the effective electron mass (m/sub e/) over the conduction band discontinuity (/spl Delta/E/sub c/) of AlGaN/GaN.
Keywords :
III-V semiconductors; aluminium compounds; effective mass; gallium compounds; high electron mobility transistors; intermodulation; wide band gap semiconductors; 35 V; 4 GHz; 40 percent; AlGaN-GaN; AlGaN/GaN HEMT; class-A operation; class-B operation; conduction band discontinuity; cut-off frequency; effective electron mass; gain characteristics; linearity; power-added efficiency; third-order intermodulation; Aluminum gallium nitride; Cutoff frequency; Electrons; FETs; Gallium nitride; HEMTs; Linearity; MODFETs; Performance gain; Voltage;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175934
