A study of subband structure and transport of two-dimensional holes in strained-Si p-MOSFETs using full-band modeling

Author

Nakatsuji, H. ; Kamakura, Y. ; Taniguchi, K.

Author_Institution

Dept. of Electron. & Inf. Syst., Osaka Univ., Japan

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

727

Lastpage

730

Abstract

The quantum confinement of the two-dimensional (2D) hole gas in the inversion layer of strained-Si p-MOSFETs is investigated theoretically. The hole mobility enhancement was found to originate from the suppressed inter-band scattering due to subband splitting and the reduced effective mass in the lowest subband with strain.

Keywords

MOSFET; Monte Carlo methods; band structure; effective mass; hole mobility; inversion layers; pseudopotential methods; quantum interference phenomena; semiconductor device models; spin-orbit interactions; two-dimensional hole gas; 2D full-band Monte Carlo technique; Si-SiGe; Si-SiO/sub 2/; full-band modeling; hole mobility enhancement; inversion layer; nonlocal empirical pseudopotential calculations; quantum confinement; reduced effective mass; spin-orbit interactions; strained-Si p-MOSFETs; subband splitting; subband structure; suppressed inter-band scattering; two-dimensional hole gas; two-dimensional hole transport; Capacitive sensors; Effective mass; Electron mobility; Information systems; Light scattering; MOSFET circuits; Particle scattering; Phonons; Potential well; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175941

Filename

1175941